NTE5538 Silicon Controlled Rectifier (SCR) 800VDRM, 50A
Description: The NTE5538 general purpose SCR is suited for power supplies up to 400HZ on resistive or inductive loads. Features: D Glass Passivated Chip D High Stability and Reliability D High Surge Capability D High On-State Current D Easy Mounting on Heatsink D Isolated Package: Insulating Voltage 2500VRMS Absolute Maximum Ratings: Peak Forward Blocking Voltage (TJ = +125C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Peak Reverse Blocking Voltage (TJ = +125C), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On-State Current (TC = +70C, Note 1), IT (RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Average On-State Current (TC = +70C, Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A Non-Repetitive Surge Peak On-State Current (TJ initial = +25C, Note 2), ITSM (t = 8.3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 525A (t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A I2t Value (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1250A2sec Critical Rate of Rise of On-State Current (Note 3), di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/s Storage and Operating Junction Temperature Range, Tstg, TJ . . . . . . . . . . . . . . . . . . -40 to +125C Thermal Resistance Junction-to-Case for DC, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Contact (Case-to-Heatsink), RthCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2C/W Note 1. Single phase circuit, 180 conducting angle. Note 2. Half sine wave. Note 3. IG = 800mA, diG/dt = 1A/s. Gate Characteristics: (Maximum Values) Peak Gate Power (t = 10s), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Average Gate Power Dissipation, PG (AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Peak Forward Gate Current (t = 10s), IFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Forward Gate Voltage (t = 10s), VFGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Gate Trigger Current Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Peak On-State Voltage Forward Leakage Current Reverse Leakage Current Total Turn-On Time Turn-Off Time Critical Rate of Rise of Off-State Voltage Symbol IGT VGT VGD IH VTM IDRM IRRM tgt tq dv/dt Test Conditions VD = 12V, RL = 33, tp 20s TJ = +125C, VD = 800V, RL = 3.3k IT = 0.5A, Gate Open ITM = 100A, tp = 10ms VDRM = 800V TJ = +125C VDRM = 800V TJ = +125C IT = 80A, VD = 800V, IG = 200mA, diG/dt = 0.2A/s TJ = +125C, IT = 80A, VR = 75V, VD = 536V, diR/dt = 30A/s, dv/dt = 20V/s, Gate Open TJ = +125C, VDRM = 536V, Gate Open, Linear Slope Up Min - - 0.2 - - - - - - - - 500 Typ - - - 20 - - - - - 2 100 - Max Unit 80 1.5 - 150 1.9 0.02 6.0 0.02 6.0 - - - mA V V mA V mA mA mA mA s s V/s
.600 (15.24)
.060 (1.52) .173 (4.4)
Isol .156 (3.96) Dia. K A G .550 (13.97)
.430 (10.92)
.500 (12.7) Min .055 (1.4) .015 (0.39)
.215 (5.45) NOTE: Dotted line indicates that case may have square corners.
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